Halyan, V.V.; Shevchuk, M.V.; Davydyuk, G.Ye.; Voronyuk, S.V.; Kevshyn, A.H.; Bulatetsky, V.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
A region of glass formation was found during melt quenching from 1273 K in
the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂-
GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined ...